Part Number | RA08H1317M |
Manufacturer | Mitsubishi Electric Semiconductor |
Title | Silicon RF Power Modules |
Description | The RA08H1317M is a 8-watt RF MOSFET Amplifier Module for 12.5-volt portable/ mobile radios that operate in the 135- to 175-MHz range. The battery... |
Features |
• Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=12.5V, VGG=0V) • Pout>8W @ VDD=12.5V, VGG=3.5V, Pin=20mW • ηT>40% @ Pout=8W (V GG control), VDD=12.5V, Pin=20mW • Broadband Frequency Range: 135-175MHz • Low-Power Control Current IGG=1mA (typ) at V... |
Datasheet | RA08H1317M Datasheet |