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RA08H1317M

Mitsubishi Electric Semiconductor
Part Number RA08H1317M
Manufacturer Mitsubishi Electric Semiconductor
Title Silicon RF Power Modules
Description The RA08H1317M is a 8-watt RF MOSFET Amplifier Module for 12.5-volt portable/ mobile radios that operate in the 135- to 175-MHz range. The battery...
Features
• Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=12.5V, VGG=0V)
• Pout>8W @ VDD=12.5V, VGG=3.5V, Pin=20mW
• ηT>40% @ Pout=8W (V GG control), VDD=12.5V, Pin=20mW
• Broadband Frequency Range: 135-175MHz
• Low-Power Control Current IGG=1mA (typ) at V...

Datasheet PDF File RA08H1317M Datasheet

RA08H1317M   RA08H1317M   RA08H1317M  




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