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QM600HD-M

Mitsubishi Electric Semiconductor
Part Number QM600HD-M
Manufacturer Mitsubishi Electric Semiconductor
Title Transistor
Description MITSUBISHI TRANSISTOR MODULES QM600HD-M HIGH POWER SWITCHING USE NON-INSULATED TYPE QM600HD-M • • • • IC Collector current ....
Features Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 350 350 400 10 600 — 2080 15 —
  –40~+150
  –40~+125 Charged part to case, AC for 1 minute Main term...

Datasheet PDF File QM600HD-M Datasheet 59.93KB

QM600HD-M   QM600HD-M   QM600HD-M  




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