| Part Number | 2SK2975 |
| Manufacturer | Mitsubishi Electric Semiconductor |
| Title | RF POWER MOS FET |
| Description | 2SK2975 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. OUTLINE DRAWING INDEX MARK (TOP) Dimension... |
| Features |
• High power gain:Gpe≥8.4dB @VDD=9.6V,f=450MHz,Pin=30dBm • High efficiency:55% typ. • Source case type seramic package (connected internally to source) 3 4.9 1 2 2.0 3.50 t=1.2MAX APPLICATION For drive stage and output stage of power amplifiers... |
| Datasheet |
 2SK2975 Datasheet
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