| Part Number | 2SK2973 |
| Manufacturer | Mitsubishi Electric Semiconductor |
| Title | RF POWER MOS FET |
| Description | 2SK2973 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. OUTLINE DRAWING 4.6MAX 1.6±0.2 Dimensions ... |
| Features |
• High power gain:Gpe≥13dB @VDD=9.6V,f=450MHz,Pin=17dBm • High efficiency:55% typ. • Source case type SOT-89 package (connected internally to source) 1 2 3 APPLICATION For drive stage and output stage of power amplifiers in VHF/UHF band portable ra... |
| Datasheet |
 2SK2973 Datasheet
|
