Part Number | PPNGZ52F120A |
Manufacturer | Microsemi (https://www.microsemi.com/) Corporation |
Title | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
Description | Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM(25) ICM(90) EAS IC(sc) IC... |
Features |
• • • • • • • • Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed package Low package inductance Very low thermal resistance Reverse polarity available upon request: PPNH(G)Z52F120B high frequen... |
Datasheet | PPNGZ52F120A Datasheet |