| Part Number | MSAFX20N60A |
| Manufacturer | Microsemi (https://www.microsemi.com/) Corporation |
| Title | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Description | Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS... |
| Features |
• • • • • • • Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity a... |
| Datasheet |
 MSAFX20N60A Datasheet 68.18KB |
