| Part Number | MX043J |
| Manufacturer | Microsemi (https://www.microsemi.com/) |
| Title | RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Description | Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25° C RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET... |
| Features |
• • • • • • • • • • • Harris FSC260R die total dose: 100 kRAD(Si) within pre-radiation parameter limits dose rate: 3 x 109 RAD(Si)/sec @ 80%BVDSS typical dose rate: 2 x 1012 RAD(Si)/sec @ ID ≤ IDM typical neutron: 1013 neutrons/cm2 within pre-radiati... |
| Datasheet |
 MX043J Datasheet
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