| Part Number | SJMN90R1K2I |
| Manufacturer | KODENSHI KOREA |
| Title | N-Channel MOSFET |
| Description | SJMN90R1K2I N-Ch Trench MOSFET Power Switching Application Features • Drain-source breakdown voltage: BVDSS=900V • Low gate charge device: Qg=13... |
| Features |
• Drain-source breakdown voltage: BVDSS=900V • Low gate charge device: Qg=13nC (Typ.) • Low drain-source On-resistance: RDS(on)=1Ω (Typ.) • Advanced trench process technology • High avalanche energy, 100% test Ordering Information Part Number Mark... |
| Datasheet |
 SJMN90R1K2I Datasheet
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