| Part Number | KU086N10P |
| Manufacturer | KEC |
| Title | N-Channel MOSFET |
| Description | This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteri... |
| Features |
VDSS= 100V, ID= 95A Drain-Source ON Resistance : RDS(ON)=8.6m (Max.) @VGS = 10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KU086N10P KU086N10F
Drain-Source Voltage Gate-Source Voltage
VDSS VGSS
100 V 20 V
@TC=25
Drain Curren...
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| Datasheet |
 KU086N10P Datasheet
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