| Part Number | Si4410DYPbF |
| Manufacturer | International Rectifier |
| Title | Power MOSFET |
| Description | This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low onresistance and ... |
| Features |
Recovery dv/dt
Single Pulse Avalanche Energy Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
RθJA
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Parameter Maximum Junction-to-Ambient
Max. 30 ±10 ±8.0 ±50 2.5 1.6 0.02 5.0 400 ± 20
-55 to + 150
...
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| Datasheet |
 Si4410DYPbF Datasheet
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