| Part Number | IRLMS2002 |
| Manufacturer | International Rectifier |
| Title | HEXFET Power MOSFET |
| Description | These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon... |
| Features |
ntinuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
20 6.5 5.2 20 2.0 1.3 0.016 ...
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| Datasheet |
 IRLMS2002 Datasheet
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