| Part Number | IRGSL4B60KD1PbF |
| Manufacturer | International Rectifier |
| Title | Insulated Gate Bipolar Transistor |
| Description | PD - 95616A IRGB4B60KD1PbF IRGS4B60KD1PbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL4B60KD1PbF ULTRAFAST SOFT RECOVERY DIODE Features C VCE... |
| Features |
C VCES = 600V
• Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free G E n-channel IC = 7.6A, TC=1... |
| Datasheet |
 IRGSL4B60KD1PbF Datasheet
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