| Part Number | IRGIB10B60KD1PBF |
| Manufacturer | International Rectifier |
| Title | INSULATED GATE BIPOLAR TRANSISTOR |
| Description | www.DataSheet.co.kr PD - 94913 IRGIB10B60KD1PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non... |
| Features |
• Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature Rated a... |
| Datasheet |
 IRGIB10B60KD1PBF Datasheet
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