| Part Number | IRGIB10B60KD1P |
| Manufacturer | International Rectifier |
| Title | INSULATED GATE BIPOLAR TRANSISTOR |
| Description | IRGIB10B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. •... |
| Features |
• Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature Rated a... |
| Datasheet |
 IRGIB10B60KD1P Datasheet 394.00KB |
