Part Number | IRG8P60N120KDPbF |
Manufacturer | International Rectifier |
Title | INSULATED GATE BIPOLAR TRANSISTOR |
Description | VCES = 1200V IC = 60A, TC =100°C IRG8P60N120KDPbF IRG8P60N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C ... |
Features |
Benchmark Low VCE(ON) 10μs Short Circuit SOA Positive VCE(ON) Temperature Coefficient Square RBSOA and high ILM- rating Lead-Free, RoHS compliant
Benefits High Efficiency in a Motor Drive Applications Increases margin for short circuit protection s...
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Datasheet | IRG8P60N120KDPbF Datasheet 671.72KB |