| Part Number | IRG8P50N120KDPbF |
| Manufacturer | International Rectifier |
| Title | INSULATED GATE BIPOLAR TRANSISTOR |
| Description | VCES = 1200V IC = 50A, TC =100°C IRG8P50N120KDPbF IRG8P50N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C ... |
| Features |
Benchmark Low VCE(ON) 10μs Short Circuit SOA Positive VCE(ON) Temperature Coefficient Square RBSOA and high ILM- rating Lead-Free, RoHS compliant
Benefits High Efficiency in a Motor Drive Applications Increases margin for short circuit protection s...
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| Datasheet |
 IRG8P50N120KDPbF Datasheet 588.21KB |
