| Part Number | IRG8P40N120KD-EPbF |
| Manufacturer | International Rectifier |
| Title | INSULATED GATE BIPOLAR TRANSISTOR |
| Description | VCES = 1200V IC = 40A, TC =100°C IRG8P40N120KDPbF IRG8P40N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C ... |
| Features |
Benchmark Low VCE(ON) 10μs Short Circuit SOA Positive VCE(ON) Temperature Coefficient Square RBSOA and high ILM- rating Lead-Free, RoHS compliant
G
E
n-channel
E GC
GCE
IRG8P40N120KDPbF IRG8P40N120KD‐EPbF
TO‐247AC
TO‐247AD
G Gate
C Collec...
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| Datasheet |
 IRG8P40N120KD-EPbF Datasheet
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