| Part Number | IRG7PSH54K10DPbF |
| Manufacturer | International Rectifier |
| Title | Insulated Gate Bipolar Transistor |
| Description | IRG7PSH54K10DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V IC = 65A, TC =100°C tSC 10µs, TJ(max) = 15... |
| Features |
Low VCE(ON) and switching losses 10µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 150°C Positive VCE (ON) Temperature Coefficient Base part number IRG7PSH54K10DPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C...
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| Datasheet |
 IRG7PSH54K10DPbF Datasheet
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