| Part Number | IRG7PH35UPBF |
| Manufacturer | International Rectifier |
| Title | INSULATED GATE BIPOLAR TRANSISTOR |
| Description | PD - 97479 INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Maximum junction t... |
| Features |
• • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead -Free IRG7PH35UPb... |
| Datasheet |
 IRG7PH35UPBF Datasheet
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