| Part Number | IRG7PH28UD1PBF |
| Manufacturer | International Rectifier |
| Title | INSULATED GATE BIPOLAR TRANSISTOR |
| Description | IRG7PH28UD1PbF IRG7PH28UD1MPbF C VCES = 1200V IC = 15A, TC = 100°C G E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCT... |
| Features |
Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA Ultra-low VF diode 1300Vpk repetitive transient capacity 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distri... |
| Datasheet |
 IRG7PH28UD1PBF Datasheet
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