| Part Number | IRFR3411PBF |
| Manufacturer | International Rectifier |
| Title | HEXFET Power MOSFET |
| Description | Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per sili... |
| Features |
ute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-S...
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| Datasheet |
 IRFR3411PBF Datasheet 226.53KB |
