| Part Number | IRF7811W |
| Manufacturer | International Rectifier |
| Title | Power MOSFET |
| Description | This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced ... |
| Features |
EVICE CHARACTERISTICS
IRF7811W RDS(on) QG Qsw Qoss 9.0mΩ 18nC 5.5nC 12nC
Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS ≥ 4.5V) Pulsed Drain Current Power Dissipation TA = 25°C T...
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| Datasheet |
 IRF7811W Datasheet
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