| Part Number | IRF7807V |
| Manufacturer | International Rectifier |
| Title | N-Channel Power MOSFET |
| Description | This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reductio... |
| Features |
stance Parameter Maximum Junction-to-Ambient Maximum Junction-to-Lead RθJA RθJL Max. 50 20 Units °C/W °C/W TJ, TSTG IS ISM TA = 25°C TA = 70°C IDM PD Symbol VDS VGS ID IRF7807 V 30 ±20 8.3 6.6 66 2.5 1.6 –55 to 150 2.5 66 °C A W A Units V 3/1/01 I... |
| Datasheet |
 IRF7807V Datasheet
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