| Part Number | F7811W |
| Manufacturer | International Rectifier |
| Title | IRF7811W |
| Description | This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced ... |
| Features |
SO-8
T o p V ie w
DEVICE CHARACTERISTICS
IRF7811W RDS(on) QG Qsw Qoss 9.0mΩ 18nC 5.5nC 12nC
Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS ≥ 4.5V) Pulsed Drain Current Power Di...
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| Datasheet |
 F7811W Datasheet 174.62KB |
