| Description | Low Noise Silicon Bipolar RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, NFmin = 1.3 dB at 900 MHz • Pb-free (RoHS compliant) and halogen-free package with visible leads • Qualification report according to AEC-Q101 availabl... |
| Features |
V
mA mW °C
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point2)
RthJS
115 K/W
1TS is measured on the collector lead at the soldering point to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
1 2014-04-04
BFP196W
Electrical Characteristics at TA = 25 °C, ...
|
| Datasheet |
 BFP196W Datasheet - 538.59KB |
