| Part Number | PTFA191001E |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Title | Thermally-Enhanced High Power RF LDMOS FET |
| Description | The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched LDMOS FETs intended for WCDMA, IS-95 and CDMA2000 application... |
| Features |
• • • Drain Efficiency (%) Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical two-carrier WCDMA performance at 1960 MHz, 30 V - Average output power = 25 W - Linear Gain = 17.0 dB - Efficiency = 27.5% - Inter... |
| Datasheet |
 PTFA191001E Datasheet
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