Description | The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the DCS band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA181001E Package H-36248-2 ... |
Features |
include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA181001E Package H-36248-2
PTFA181001F Package H-37248-2
2-Carrier WCDMA Drive-up
VDD = 28 V, IDQ = 750 mA, ƒ = 18...
|
Datasheet | PTFA181001E Datasheet - 418.90KB |