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PTFA181001E Infineon (https://www.infineon.com/) Technologies Thermally-Enhanced High Power RF LDMOS FET

Description The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the DCS band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA181001E Package H-36248-2 ...
Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA181001E Package H-36248-2 PTFA181001F Package H-37248-2 2-Carrier WCDMA Drive-up VDD = 28 V, IDQ = 750 mA, ƒ = 18...

Datasheet PDF File PTFA181001E Datasheet - 418.90KB

PTFA181001E  






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