| Part Number | PTFA220081M |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Title | High Power RF LDMOS Field Effect Transistor |
| Description | The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200 MHz. This LDMOS tra... |
| Features |
• Typical two-carrier WCDMA performance, 8 dB PAR - POUT = 33 dBm Avg - ACPR = –40 dBc • Typical CW performance, 940 MHz, 28 V - POUT = 40 dBm - Efficiency = 59% - Gain = 20 dB • Typical CW performance, 2140 MHz, 28 V - POUT = 40 dBm - Efficiency ... |
| Datasheet |
 PTFA220081M Datasheet
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