| Part Number | 2SD1770 |
| Manufacturer | Inchange Semiconductor Company |
| Title | Silicon NPN Darlington Power Transistor |
| Description | ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) ·Complement to Type 2SB1190 ·Minimum Lot-to-Lot variatio... |
| Features |
C= 5mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0.1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA
VBE(on) Base-Emitter On Voltage
IC= 0.3A; VCE= 10V
ICBO
Collector Cutoff Current
VCB= 200V; IE= 0
IEBO
E...
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| Datasheet |
 2SD1770 Datasheet
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