| Part Number | PMD1601K |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Darlingtion Power Transistor |
| Description | ·High DC current gain ·Collector-Emitter Breakdown VoltageV(BR)CEO= 60V(Min) ·Complement to type PMD1701K APPLICATIONS ·Designed for general purp... |
| Features |
istor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
PMD1601K
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 100mA; IB= 0
60
V
V(BR)CER
Collector-Emitter Breakdown Voltage
IC= 100mA;...
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| Datasheet |
 PMD1601K Datasheet
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