Part Number | MJD117 |
Manufacturer | Inchange Semiconductor |
Title | Silicon PNP Power Transistor |
Description | ·High DC current gain ·Built-in a damper diode at E-C ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“-I”suffix) ·100%... |
Features |
erwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat)-1* Collector-Emitter Saturation Voltage IC= -2A; IB=- 8mA
VCE(sat)-2* Collector-Emitter Saturation Voltage IC= -4A; IB=- 40mA
VBE(sat)* Base-Emitter Saturation Voltage
IC=- 4A; IB=- 40mA
V...
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Datasheet | MJD117 Datasheet |