| Part Number | KTD1414 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistors |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current G... |
| Features |
specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 6mA
ICBO
Collector Cutoff C...
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| Datasheet |
 KTD1414 Datasheet
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