Part Number | IRF251 |
Manufacturer | Inchange Semiconductor |
Title | N-Channel MOSFET Transistor |
Description | ·Drain Current –ID=30A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.085Ω(Max) ·Nanosecond Swit... |
Features |
ecification
IRF251
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS(TH) Gate Threshold Voltage VGS=0; ID=250µA VDS= VGS; ID=250µA RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=... |
Datasheet | IRF251 Datasheet |