| Part Number | BDY13-6 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1V(Max)@ IC = 3A ·High Switching Sp... |
| Features |
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
80
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 100uA; IE= 0
60
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A...
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| Datasheet |
 BDY13-6 Datasheet
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