Part Number | BD735 |
Manufacturer | Inchange Semiconductor |
Title | Silicon NPN Power Transistor |
Description | ·DC Current Gain - : hFE = 40(Min.)@ IC= 20mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min.) ·Complement to Type BD736 ·Minimum Lot-t... |
Features |
ector-Emitter Breakdown Voltage IC= 30mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
VBE(on) Base-Emitte...
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Datasheet | BD735 Datasheet |