Part Number | BD245D |
Manufacturer | Inchange Semiconductor |
Title | Silicon NPN Power Transistor |
Description | ·Excellent Safe Operating Area ·DC Current Gain- : hFE>40@IC = 1A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1 V(Max)@ IC = 3A ·Designed f... |
Features |
emark
isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC=...
|
Datasheet | BD245D Datasheet |