| Part Number | 3DD207 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistors |
| Description | ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust ... |
| Features |
otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVCBO Collector-Base Sustaining Voltage IC= 50mA; IE= 0
BVCEO Collector-Emitter Sustaining Voltage IC= 1mA; IB= 0
BVEBO Emitter-Base Sustaining Voltage
IE= 1mA; IC=0
VCE(sat) Collector-Emitter S...
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| Datasheet |
 3DD207 Datasheet
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