Part Number | 3DD101A |
Manufacturer | Inchange Semiconductor |
Title | Silicon NPN Power Transistor |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·DC Current Gain- : hFE= 20(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage- : VCE... |
Features |
ess otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 5mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
VCE(sat) Collecto...
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Datasheet | 3DD101A Datasheet |