| Part Number | 2SK770 |
| Manufacturer | Inchange Semiconductor |
| Title | N-Channel MOSFET Transistor |
| Description | ·Drain Current –ID=2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations... |
| Features |
AL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS=25 V; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 1A
IGSS
Gate Source Leakage ...
|
| Datasheet |
 2SK770 Datasheet 234.87KB |
