Part Number | 2SK766 |
Manufacturer | Inchange Semiconductor |
Title | N-Channel MOSFET Transistor |
Description | ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations... |
Features |
AL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS=25 V; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 2A
IGSS
Gate Source Leakage ...
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Datasheet | 2SK766 Datasheet |