Part Number | 2SK2019-01 |
Manufacturer | Inchange Semiconductor |
Title | N-Channel MOSFET Transistor |
Description | ·Drain Current –ID= 3.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device p... |
Features |
C=25℃)
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VSD
Diode Forward On-voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
Ciss
Input...
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Datasheet | 2SK2019-01 Datasheet 217.97KB |