| Part Number | 2SJ156 |
| Manufacturer | Inchange Semiconductor |
| Title | P-Channel MOSFET Transistor |
| Description | ·Low Drain-Source ON Resisitance ·High Forward Transfer Admittance ·Low Leakage Current ·Enhancement-Mode ·Minimum Lot-to-Lot variations for robus... |
| Features |
LECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= -10mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= -1mA
RDS(ON) Drain-Source On-stage Resistance VGS= -10V; ID= -3A
IGSS
Gate ...
|
| Datasheet |
 2SJ156 Datasheet 194.18KB |
