| Part Number | 2SD2642 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Darlington Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 5A, VCE= 4V) ·Low Collector Saturation... |
| Features |
wise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 5mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 5mA
ICBO
Collector Cu...
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| Datasheet |
 2SD2642 Datasheet 214.95KB |
