| Part Number | 2SD2562 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Darlington Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 10A, VCE= 4V) ·Low Collector Saturatio... |
| Features |
cified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA, IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A ,IB= 10mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 10A ,IB= 10mA
ICBO
Collector Cutoff ...
|
| Datasheet |
 2SD2562 Datasheet 222.92KB |
