| Part Number | 2SD2165 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·High DC Current Gain- : hFE= 800(MIN)@ (VCE= 5V, IC= 1A) ·Low Collector-Emitter Saturation Voltage : VCE(sat) =1V(MIN)@ (IC = 3V, IB= 30mA) ·Mini... |
| Features |
otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 30mA
1
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 30mA
1.5
V
ICBO
Collector Cutoff Current
VCB= 60V;...
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| Datasheet |
 2SD2165 Datasheet
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