| Part Number | 2SD2161 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= 2V, IC= 2A) ·Low Collector Saturation V... |
| Features |
tor
2SD2161
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 2mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 2mA
ICBO
Collector Cutof...
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| Datasheet |
 2SD2161 Datasheet
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