| Part Number | 2SD1713 |
| Manufacturer | Inchange Semiconductor |
| Title | Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1158 ·Minim... |
| Features |
ration Voltage IC= 4A; IB= 0.4A
VBE(on) Base -Emitter On Voltage
IC= 4A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 120V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
hFE-1
DC Current Gain
IC= 20mA; VCE= 5V
hFE-2
DC Current Gain
IC=...
|
| Datasheet |
 2SD1713 Datasheet
|
