| Part Number | 2SD1711 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistors |
| Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device perform... |
| Features |
Saturation Voltage IC= 4.5A; IB= 2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4.5A; IB= 2A
ICBO
Collector Cutoff Current
VCB= 800V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V ; IC= 0
hFE-1
DC Current Gain
tf
Fall Time
IC= 0.5A ; VCE= ...
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| Datasheet |
 2SD1711 Datasheet 214.50KB |
