| Part Number | 2SD1706 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 7... |
| Features |
(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 7A; IB= 0.35A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A; IB= 1.5A
VBE(sat)-1 Base -Emitter Saturation Voltage
IC= 7A; IB...
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| Datasheet |
 2SD1706 Datasheet 216.00KB |
