| Part Number | 2SD1670 |
| Manufacturer | Inchange Semiconductor |
| Title | Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain- : hFE= 1000( Min.) @ IC= 10A ·Low Collector Saturation Voltage-... |
| Features |
s otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 25mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 10A; IB= 25mA
ICBO
Collector Cutoff Current
VCB= 100V ; IE= 0
IEBO
Emitter Cutof...
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| Datasheet |
 2SD1670 Datasheet
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